MARC details
000 -LEADER |
fixed length control field |
03137nam a22005415i 4500 |
001 - CONTROL NUMBER |
control field |
978-0-387-28003-5 |
003 - CONTROL NUMBER IDENTIFIER |
control field |
DE-He213 |
005 - DATE AND TIME OF LATEST TRANSACTION |
control field |
20170628033253.0 |
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
fixed length control field |
cr nn 008mamaa |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
fixed length control field |
100301s2006 xxu| s |||| 0|eng d |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
International Standard Book Number |
9780387280035 |
-- |
978-0-387-28003-5 |
024 7# - OTHER STANDARD IDENTIFIER |
Standard number or code |
10.1007/0-387-28003-0 |
Source of number or code |
doi |
050 #4 - LIBRARY OF CONGRESS CALL NUMBER |
Classification number |
TK7800-8360 |
050 #4 - LIBRARY OF CONGRESS CALL NUMBER |
Classification number |
TK7874-7874.9 |
072 #7 - SUBJECT CATEGORY CODE |
Subject category code |
TJF |
Source |
bicssc |
072 #7 - SUBJECT CATEGORY CODE |
Subject category code |
TEC008000 |
Source |
bisacsh |
072 #7 - SUBJECT CATEGORY CODE |
Subject category code |
TEC008070 |
Source |
bisacsh |
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
Classification number |
621.381 |
Edition number |
23 |
100 1# - MAIN ENTRY--PERSONAL NAME |
Personal name |
Lundstrom, Mark S. |
Relator term |
author. |
245 10 - TITLE STATEMENT |
Title |
Nanoscale Transistors |
Medium |
[electronic resource] : |
Remainder of title |
Device Physics, Modeling and Simulation / |
Statement of responsibility, etc |
by Mark S. Lundstrom, Jing Guo. |
264 #1 - |
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Boston, MA : |
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Springer US, |
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2006. |
300 ## - PHYSICAL DESCRIPTION |
Extent |
VIII, 218 p. 106 illus. |
Other physical details |
online resource. |
336 ## - |
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text |
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txt |
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rdacontent |
337 ## - |
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computer |
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c |
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rdamedia |
338 ## - |
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online resource |
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cr |
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rdacarrier |
347 ## - |
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text file |
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PDF |
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rda |
505 0# - FORMATTED CONTENTS NOTE |
Formatted contents note |
Basic Concepts -- Devices, Circuits, and Systems -- The Ballistic Nanotransistor -- Scattering Theory of the MOSFET -- Nanowire Field-Effect Transistors -- Transistors at the Molecular Scale. |
520 ## - SUMMARY, ETC. |
Summary, etc |
NANOSCALE TRANSISTORS: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. Chapter 1 reviews some basic concepts, and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits, and systems. This material provides a baseline against which new devices can be assessed. Chapters 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules. The book is a useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Chemistry. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Condensed matter. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Particles (Nuclear physics). |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Electronics. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Optical materials. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Nanotechnology. |
650 14 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Chemistry. |
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Electronics and Microelectronics, Instrumentation. |
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Nanotechnology. |
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Solid State Physics and Spectroscopy. |
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Optical and Electronic Materials. |
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Condensed Matter. |
700 1# - ADDED ENTRY--PERSONAL NAME |
Personal name |
Guo, Jing. |
Relator term |
author. |
710 2# - ADDED ENTRY--CORPORATE NAME |
Corporate name or jurisdiction name as entry element |
SpringerLink (Online service) |
773 0# - HOST ITEM ENTRY |
Title |
Springer eBooks |
776 08 - ADDITIONAL PHYSICAL FORM ENTRY |
Display text |
Printed edition: |
International Standard Book Number |
9780387280028 |
856 40 - ELECTRONIC LOCATION AND ACCESS |
Uniform Resource Identifier |
<a href="http://dx.doi.org/10.1007/0-387-28003-0">http://dx.doi.org/10.1007/0-387-28003-0</a> |
912 ## - |
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ZDB-2-ENG |