Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment (Record no. 15216)

MARC details
000 -LEADER
fixed length control field 06658nam a22005535i 4500
001 - CONTROL NUMBER
control field 978-1-4020-3013-0
003 - CONTROL NUMBER IDENTIFIER
control field DE-He213
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20170628033437.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
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008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 100301s2005 ne | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781402030130
-- 978-1-4020-3013-0
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1007/1-4020-3013-4
Source of number or code doi
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7800-8360
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7874-7874.9
072 #7 - SUBJECT CATEGORY CODE
Subject category code TJF
Source bicssc
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC008000
Source bisacsh
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC008070
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.381
Edition number 23
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Flandre, Denis.
Relator term editor.
245 10 - TITLE STATEMENT
Title Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment
Medium [electronic resource] :
Remainder of title Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment Kiev, Ukraine 26–30 April 2004 /
Statement of responsibility, etc edited by Denis Flandre, Alexei N. Nazarov, Peter L.F. Hemment.
264 #1 -
-- Dordrecht :
-- Springer Netherlands,
-- 2005.
300 ## - PHYSICAL DESCRIPTION
Extent XII, 348 p.
Other physical details online resource.
336 ## -
-- text
-- txt
-- rdacontent
337 ## -
-- computer
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-- rdamedia
338 ## -
-- online resource
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-- rdacarrier
347 ## -
-- text file
-- PDF
-- rda
490 1# - SERIES STATEMENT
Series statement NATO Science Series II: Mathematics, Physics and Chemistry,
International Standard Serial Number 1568-2609 ;
Volume number/sequential designation 185
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Technology and Economics -- High Temperature Electronics - Cluster Effects -- On the Evolution of SOI Materials and Devices -- SOI Technology as a Basis for Microphotonic-Microelectronic Integrated Devices -- SOI Material Technologies -- Smart Cut Technology: The Path for Advanced SOI Substrates -- Porous Silicon Based SOI: History and Prospects -- Achievement of SiGe-on-Insulator Technology -- CVD Diamond Films for SOI Technologies -- Radical Beam Quasiepitaxy Technology for Fabrication of Wide-Gap Semiconductors on Insulator -- Impact of Hydrostatic Pressure during Annealing of Si:O on Creation of Simox - Like Structures -- SiO2 and Si3N4 Phase Formation by Ion Implantation with In-Situ Ultrasound Treatment -- Fabrication and Characterisation of Silicon on Insulator Substrates Incorporating Thermal Vias -- Reliability and Operation of SOI Devices in Harsh Environment -- Reliability and Electrical Fluctuations in Advanced SOI CMOS Devices -- Hydrogen and High-Temperature Charge Instability of SOI Structures and MOSFETs -- Recent Advances in SOI MOSFET Devices and Circuits for Ultra-Low Power / High Temperature Applications -- Silicon-on-Insulator Circuits for Application at High Temperatures -- High-Voltage SOI Devices for Automotive Applications -- Heat Generation Analysis in SOI LDMOS Power Transistors -- Novel SOI MOSFET Structure for Operation over a Wide Range of Temperatures -- MOSFETs Scaling Down: Advantages and Disadvantages for High Temperature Applications -- Temperature Dependence of RF Losses in High-Resistivity SOI Substrates -- Radiation Effects -- Review of Radiation Effects in Single and Multiple-Gate SOI MOSFETs -- Radiation Effects in SOI: Irradiation by High Energy Ions and Electrons -- Radiation Characteristics of Short P- Channel MOSFETs on SOI Substrates -- Total Dose Behavior of Partially Depleted Delecut SOI MOSFETs -- Radiation Effect on Electrical Properties of Fully-Depleted Unibond SOI MOSFETs -- Characterization and Simulation of SOI Devices Operating under Harsh Environment -- Low Cost High Temperature Test System for SOI Devices -- Characterization of Carrier Generation in Thin-Film SOI Devices by Reverse Gated-Diode Technique and its Application at High Temperatures -- Back-Gate Induced Noise Overshoot in Partially-Depleted SOI MOSFETs -- Novel SOI Devices and Sensors Operating at Harsh Conditions -- SiGe Heterojunction Bipolar Transistors on Insulating Substrates -- Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI) -- High-Voltage High-Current DMOS Transistor Compatible with High-Temperature Thin-Film SOI CMOS Applications -- A Novel Low Leakage EEPROM Cell for Application in an Extended Temperature Range (?40°C Up to 225°C) -- Design, Fabrication and Characterization of SOI Pixel Detectors of Ionizing Radiation -- Polysilicon-on-Insulator Layers at Cryogenic Temperatures and High Magnetic Fields -- Planar Photomagnetic Effect SOI Sensors for Various Applications with Low Detection Limit -- Theoretical Limit for the SiO2 Thickness in Silicon MOS Devices -- Compact Model of the Nanoscale Gate-All-Around MOSFET -- Self-Assembled Semiconductor Nanowires on Silicon and Insulating Substrates: Experimental Behavior -- Fabrication of SOI Nano Devices.
520 ## - SUMMARY, ETC.
Summary, etc This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on “Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment” held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Engineering.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Microwaves.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Electronics.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Optical materials.
650 14 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Engineering.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Electronics and Microelectronics, Instrumentation.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Optical and Electronic Materials.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Automotive and Aerospace Engineering, Traffic.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Electronic and Computer Engineering.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Microwaves, RF and Optical Engineering.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Nazarov, Alexei N.
Relator term editor.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Hemment, Peter L.F.
Relator term editor.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Printed edition:
International Standard Book Number 9781402030116
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title NATO Science Series II: Mathematics, Physics and Chemistry,
-- 1568-2609 ;
Volume number/sequential designation 185
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="http://dx.doi.org/10.1007/1-4020-3013-4">http://dx.doi.org/10.1007/1-4020-3013-4</a>
912 ## -
-- ZDB-2-ENG
Holdings
Withdrawn status Lost status Source of classification or shelving scheme Damaged status Not for loan Home library Current library Date acquired Source of acquisition Total Checkouts Barcode Date last seen Price effective from Koha item type
    Dewey Decimal Classification     Central Library Central Library 28/06/2017 Springer EBook   E-38395 28/06/2017 28/06/2017 E-Book

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