TY  - BOOK
AU  - Lundstrom,Mark S.
AU  - Guo,Jing
ED  - SpringerLink (Online service)
TI  - Nanoscale Transistors: Device Physics, Modeling and Simulation 
SN  - 9780387280035
AV  - TK7800-8360 
U1  - 621.381 23
PY  - 2006///
CY  - Boston, MA
PB  - Springer US
KW  - Chemistry
KW  - Condensed matter
KW  - Particles (Nuclear physics)
KW  - Electronics
KW  - Optical materials
KW  - Nanotechnology
KW  - Electronics and Microelectronics, Instrumentation
KW  - Solid State Physics and Spectroscopy
KW  - Optical and Electronic Materials
KW  - Condensed Matter
N1  - Basic Concepts -- Devices, Circuits, and Systems -- The Ballistic Nanotransistor -- Scattering Theory of the MOSFET -- Nanowire Field-Effect Transistors -- Transistors at the Molecular Scale
N2  - NANOSCALE TRANSISTORS: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. Chapter 1 reviews some basic concepts, and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits, and systems. This material provides a baseline against which new devices can be assessed. Chapters 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules. The book is a useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices
UR  - http://dx.doi.org/10.1007/0-387-28003-0
ER  -