TY  - BOOK
AU  - Baliga,B.Jayant
ED  - SpringerLink (Online service)
TI  - Fundamentals of Power Semiconductor Devices
SN  - 9780387473147
AV  - TK1001-1841 
U1  - 621.042 23
PY  - 2008///
CY  - Boston, MA
PB  - Springer US
KW  - Engineering
KW  - Electronics
KW  - Systems engineering
KW  - Electric engineering
KW  - Energy Technology
KW  - Circuits and Systems
KW  - Electronics and Microelectronics, Instrumentation
KW  - Solid State Physics
KW  - Spectroscopy and Microscopy
KW  - Energy, general
N1  - Material Properties and Transport Physics -- Breakdown Voltage -- Schottky Rectifiers -- P-i-N Rectifiers -- Power MOSFETs -- Bipolar Junction Transistors -- Thyristors -- Thyristors -- Synopsis
N2  - Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are developed. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. Drawing upon years of practical experience and using numerous examples and illustrative applications, B. Jayant Baliga discusses: Numerical simulation examples to elucidate the operating physics and validate the models Device performance attributes that allow practicing engineers in the industry to develop products Treatment of all types of power rectifiers and transistors to create a comprehensive reference in the field Fundamentals of Power Semiconductor Devices will be of interest to practicing engineers in the power semiconductor device community and can also serve as an ideal textbook for teaching courses on power semiconductor devices due to the extensive analytical treatment provided for all device structures
UR  - http://dx.doi.org/10.1007/978-0-387-47314-7
ER  -